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d a t a sh eet preliminary speci?cation file under integrated circuits, ic01 1997 aug 12 integrated circuits UAA3202m frequency shift keying (fsk) receiver
1997 aug 12 2 philips semiconductors preliminary speci?cation frequency shift keying (fsk) receiver UAA3202m features low cost single-chip fsk receiver superheterodyne architecture with high integration level few external low cost components wide supply voltage range low power consumption wide frequency range, 150 to 450 mhz high sensitivity if band determined by application high selectivity very low spurious radiation, - 60 dbm (meets ftz 17tr2100) automotive temperature range power-down mode ssop20 package. applications keyless entry systems car alarm systems remote control systems security systems telemetry systems wireless data transmission domestic appliances. general description the UAA3202m is a fully integrated single-chip receiver, primarily intended for use in vhf and uhf systems employing direct frequency shift keying (fsk) modulation. the UAA3202m incorporates a saw stabilized local oscillator, balanced mixer, if amplifier, limiter, received signal strength indicator (rssi), rssi comparator, fsk demodulator, data filter and data slicer. the device features a power-down mode in order to minimize the average receiver supply current. quick reference data ordering information symbol parameter conditions min. typ. max. unit v cc supply voltage 3.5 - 6v i cc supply current for operating mode on v pwd =0v; r 2 = 560 w 2.0 3.4 4.7 ma operating mode off v pwd =v cc - 330 m a p sens sensitivity f i = 433.92 mhz; f mod = 250 hz square wave; d f= 25 khz; ber 3% --- 94 dbm t amb operating ambient temperature - 40 - +85 c type number package name description version UAA3202m ssop20 plastic shrink small outline package; 20 leads; body width 5.3 mm sot339-1
1997 aug 12 3 philips semiconductors preliminary speci?cation frequency shift keying (fsk) receiver UAA3202m block diagram fig.1 block diagram. handbook, full pagewidth mha797 1.5 k w 50 k w 30 k w 150 k w 150 k w 1.4 k w 1.5 k w mixer bias oscillator limiter amplifier 20 19 18 17 16 15 14 13 12 11 12 3 4 5 6 7 8 9 10 if amp v cc rssi v ref v ref phase shift phase detector UAA3202m buffer mon mop v cc osc ose v eo v ee comp cpb cpa fa v em mxin lin rssi dmod lfb cpc pwd data
1997 aug 12 4 philips semiconductors preliminary speci?cation frequency shift keying (fsk) receiver UAA3202m pinning symbol pin description mon 1 negative mixer output mop 2 positive mixer output v cc 3 positive supply voltage osc 4 oscillator collector ose 5 oscillator emitter v eo 6 negative supply voltage for oscillator v ee 7 negative supply voltage comp 8 rssi comparator output cpb 9 comparator input b cpa 10 comparator input a data 11 data output pwd 12 power-down control input cpc 13 comparator input c dmod 14 demodulator frequency adjustment rssi 15 rssi current output lfb 16 limiter feedback lin 17 limiter input mxin 18 mixer input v em 19 negative supply voltage for mixer fa 20 if ampli?er output fig.2 pin configuration. handbook, halfpage mon mop v cc osc ose v eo v ee comp cpb cpa fa v em mxin lin rssi dmod lfb cpc pwd data 1 2 3 4 5 6 7 8 9 10 11 12 20 19 18 17 16 15 14 13 UAA3202m mha796
1997 aug 12 5 philips semiconductors preliminary speci?cation frequency shift keying (fsk) receiver UAA3202m functional description the device is based on the superheterodyne architecture incorporating a mixer, local oscillator, if amplifier, limiter, rssi, rssi comparator, fsk demodulator, data filter, data slicer and power-down circuitry. the device employs a low if frequency of typically 1 mhz in order to allow if filtering by means of external low cost r, l and c components. if image rejection is required it can be achieved by applying a matching external front-end saw filter. the device provides a wide if range of 300 khz in order to allow the use of a saw stabilized oscillator. the on-chip local oscillator provides the injection signal for the mixer. tuning of the on-chip local oscillator is not necessary. the oscillator frequency is determined by an external 1-port saw resonator. the rf input signal is fed to the mixer and down converted to the if frequency. after amplification and filtering the rf signal is applied to a limiter. the if filter order and characteristics are determined by the external low cost r, l and c components. the limiter amplifier provides a rssi signal which can be routed to an on-chip rssi level comparator in order to derive a field strength indication for external use. the limited if signal is fed to the fsk demodulator. the demodulator centre frequency is determined by an external capacitor. no alignment is necessary for the fsk demodulator. after filtering the demodulated data signal is fed to a data slicer and is made available at the data output. the data filter characteristics are determined by external capacitors. the data slicer employs an adaptive slice reference in order to track frequency offsets. the device is switched from power-down to operating mode and vice versa by means of a control input. extremely low supply current is drawn when the device is in power-down mode. measures are taken to allow fast receiver settling when the device is switched from power-down to operating mode. mixer the mixer is a single balanced emitter coupled mixer with internal biasing. matching of the rf source impedance to the mixer input requires an external matching network. oscillator the oscillator consists of an on-chip transistor in common base configuration. an external tank and saw resonator determines the oscillator frequency. oscillator alignment is not necessary. oscillator bias is controlled by an external resistor. post mixer ampli?er the post mixer amplifier (pma) is a differential input, single-ended output amplifier. it separates the first and second if filters from each other. amplifier gain is provided in order to reduce the influence of the limiter noise figure on the total noise figure. limiter the limiter is a single-ended input multiple stage amplifier with high total gain. amplifier stability is achieved by means of an external dc feedback capacitor, which is also used to determine the lower limiter cut-off frequency. an rssi signal proportional to the limiter input signal is provided. if ?lters if filtering with high selectivity is realized by means of external low cost r, l and c components. the first if filter is located directly following the mixer output. an external l/c network assembles a band-pass with low sensitivity in order to meet the bandwidth of an elliptic low-pass filter external to the device and is located in front of the limiter. the filter source impedance is determined by the drive impedance of the if amplifier. in order to improve the if filter selectivity below the pass-band a high-pass characteristic is added by means of a dc blocking capacitor in front of the limiter input and by means of the limiter dc feedback capacitor. rssi the rssi signal is a current proportional to the limiter input level (rf input power). by means of an external resistor the resulting rssi voltage level is set in order to fit the application. the rssi voltage is available to external circuits and is fed to the input of the rssi level comparator. for rssi filtering an external capacitor is connected. rssi level comparator the rssi level comparator compares the rssi level with a fixed and independent internal reference voltage. if the rssi level exceeds the internal reference voltage a logic high signal is generated. the level comparator provides some hysteresis in order to avoid spurious oscillation. the output of the level comparator is designed as an open-collector with internal pull-up.
1997 aug 12 6 philips semiconductors preliminary speci?cation frequency shift keying (fsk) receiver UAA3202m fsk demodulator the limited if signal is converted into baseband data by means of a quadrature fm demodulator consisting of an all-pass filter and a mixer stage. no alignment of the demodulator is necessary. the demodulator centre frequency is set by a capacitor external to the device. the demodulator provides a large audio bandwidth in order to allow high data rate applications. the demodulator can detect a small if frequency deviation even if a relatively large if frequency offset is encountered. data ?lters after demodulation a two-stage data filtering circuit is provided in order to suppress unwanted frequency components. two r/c low-pass filters with on-chip resistors are provided which are separated by a buffer stage. data slicer data detection is provided by means of a level comparator with adaptive slice reference. after the first data filter stage the pre-filtered data is split into two parts. one part passes the second data filter stage and is fed to the positive comparator input. the other path is fed to an integration circuit with a large time constant in order to derive the average value (dc component) as an adaptive slice reference which is presented to the negative comparator input. the adaptive reference enables the received data over a large range of demodulator frequency offsets to be detected. the integration circuit consists of a simple r/c low-pass filter with on-chip resistor. the level comparator output is designed as an open-collector with internal pull-up. power-down circuitry the device provides a power-down mode. while in power-down mode the device disables the majority of the internal circuits and consumes extremely low current. measures are taken to allow fast receiver settling when normal operation is resumed. thus circuits with large time constants are only powered down partly or provide a high impedance during power-down in order to avoid the discharge of external capacitors as much as possible. power-down mode is entered when the control input is active high. the control input provides an internal pull-up resistor of high impedance. limiting values in accordance with the absolute maximum rating system (iec 134). note 1. human body model: equivalent to discharging a 100 pf capacitor through a 1.5 k w series resistor. thermal characteristics symbol parameter conditions min. max. unit v cc supply voltage - 0.3 +8.0 v t amb operating ambient temperature - 40 +85 c t stg storage temperature - 55 +125 c v esd electrostatic handling note 1 pins 4 and 5 - 2000 +1500 v pins 18 and 19 - 1500 +2000 v all other pins - 2000 +2000 v symbol parameter value unit r th j-a thermal resistance from junction to ambient in free air 125 k/w
1997 aug 12 7 philips semiconductors preliminary speci?cation frequency shift keying (fsk) receiver UAA3202m dc characteristics v cc = 3.5 v; t amb =25 c; for application diagram see fig.11; unless otherwise speci?ed. notes 1. the given values are valid for the whole temperature range from t amb = - 40 to +85 c. 2. tune rf input frequency until if = 1 mhz. symbol parameter conditions min. typ. max. unit supplies v cc supply voltage 3.5 - 6v i cc supply current for note 1 operating mode on v pwd =0v; r 2 = 560 w 2.0 3.4 4.7 ma operating mode off v pwd =v cc - 330 m a v pwd(on) pwd voltage for operating mode on 0 - 300 mv v pwd(off) pwd voltage for operating mode off v cc - 0.3 - v cc v i pwd(on) pwd current for operating mode on v pwd =0v - 30 - 10 - 3 m a i pwd(off) pwd current for operating mode off v pwd =v cc - 13 m a oscillator v osc(dc) dc operating point pin 4 3.28 3.34 3.40 v mixer v mxin(dc) dc operating point pin 18 0.68 0.78 0.88 v v mop(dc) dc operating point pin 2 2.78 2.98 3.18 v v mon(dc) dc operating point pin 1 2.78 2.98 3.18 v post mixer ampli?er v fa(dc) dc operating point pin 20 2.14 2.27 2.40 v limiter v lin(dc) dc operating point pin 17 3.45 3.49 3.50 v v lfb(dc) dc operating point pin 16 2.76 2.81 2.86 v v rssi(dc) dc operating point pin 15 2.21 2.36 2.51 v demodulator v dmod(dc) dc operating point pin 14 1.63 1.83 2.03 v data slicer v cpc(dc) dc operating point pin 13 note 2 1.43 1.93 2.43 v v cpa(dc) dc operating point pin 10 note 2 1.43 1.93 2.43 v v cpb(dc) dc operating point pin 9 note 2 1.43 1.93 2.43 v v oh(dat) high-level data output voltage i data = - 10 m av cc - 0.5 - v cc v v ol(dat) low-level data output voltage i data = 200 m a0 - 0.6 v rssi comparator v oh(rssi) high-level comparator output voltage i rssi = - 10 m av cc - 0.5 - v cc v v ol(rssi) low-level comparator output voltage i rssi = 200 m a0 - 0.6 v
1997 aug 12 8 philips semiconductors preliminary speci?cation frequency shift keying (fsk) receiver UAA3202m ac characteristics v cc = 3.5 v; t amb =25 c; for application diagram see fig.11; f i = 433.92 mhz; d f= 25 khz; f mod = 250 hz square wave, i.e. 500 bits/s; unless otherwise speci?ed. notes 1. measured at the rf input connector of the test board. 2. measured at test point a in fig.11. symbol parameter conditions min. typ. max. unit system performance p sens sensitivity ber 3% --- 94 dbm p i(max) maximum input power ber 3% --- 30 dbm a rad spurious radiation note 1 --- 60 dbm t st receiver settling time p i =p sens + 10 db; see fig.5 - 25ms b if if bandwidth range p i =p sens + 3 db 850 1000 1150 khz f d data frequency 140 - 250 hz mixer g mix mixer conversion gain 31 33 35 db r o(mix) mixer output resistance 2.7 3 3.3 k w post mixer ampli?er ip3 pma interception point (mixer + pma) note 2 - 38 - 35 - dbm g pma pma gain note 2 9 10.4 12 db p <1db compression (mixer + pma) p i = - 45 dbm 0 - 1 dbm bw pma pma lp cut-off frequency 5 -- mhz r opma pma output resistance 1.2 1.4 1.6 k w limiter g lim limiter gain 60 63.5 67 db b lim limiter lp cut-off frequency 2 5 8 mhz r i(lim) limiter input resistance 40 50 60 k w demodulator g dmod demodulator gain note 2 0.8 1 1.2 f c(dmod) demodulator centre frequency 800 1000 1200 khz d f frequency deviation 20 25 70 khz r o(dmod) demodulator output resistance 24 30 36 k w data slicer b ds data slicer bandwidth 35 50 - khz r o(ds) data slicer output resistance 120 150 180 k w rssi comparator v o(rssi) rssi output voltage see fig.3 ---- v o(comp) comp output voltage see fig.4 ---- p th(on) threshold for switching comp output voltage to high - 99.5 - 95.5 - 91.5 dbm p hys(w) hysteresis width of comp output voltage 1 2 4 dbm mv khz --------- -
1997 aug 12 9 philips semiconductors preliminary speci?cation frequency shift keying (fsk) receiver UAA3202m fig.3 rssi output voltage as a function of rf input power. (1) t amb =85 c. (2) t amb =25 c. (3) t amb = - 40 c. handbook, full pagewidth 2.7 2.8 mha811 v o(rssi) (v) 2.6 2.5 2.4 - 100 - 90 - 80 - 70 - 60 - 50 p i (dbm) (1) (2) (3) fig.4 comparator output voltage as a function of hf input power. handbook, halfpage mha812 p hys(w) 3.0 0.6 v o(comp) (v) p th(on) - 97.5 - 95.5 p i (dbm)
1997 aug 12 10 philips semiconductors preliminary speci?cation frequency shift keying (fsk) receiver UAA3202m internal circuitry table 1 equivalent pin circuits and pin voltages for rough test of printed circuit board; v cc = 3.5 v; no input signal pin symbol dc voltage (v) equivalent circuit 1 mon 2.98 2 mop 2.98 3v cc - 4 osc 3.34 5 ose - 6v eo 0 7v ee 0 8 comp - 9 cpb 1.93 10 cpa 1.93 mha798 v ee 1.5 k w 1.5 k w 2 1 v cc v em mha799 6 k w 4 5 v ee mha800 1 k w 8 v cc v ee mha801 150 k w 150 w 10 9 v cc v ee
1997 aug 12 11 philips semiconductors preliminary speci?cation frequency shift keying (fsk) receiver UAA3202m 11 data - 12 pwd - 13 cpc 1.93 14 dmod 1.83 pin symbol dc voltage (v) equivalent circuit mha802 1 k w 11 v cc v ee mha803 300 k w 12 v cc mha804 30 k w 13 v cc v ee mha805 14 v cc v ee
1997 aug 12 12 philips semiconductors preliminary speci?cation frequency shift keying (fsk) receiver UAA3202m 15 rssi 2.36 16 lfb 2.81 17 lin 3.49 pin symbol dc voltage (v) equivalent circuit mha806 15 v cc mha807 16 v cc v ee mha808 50 k w 17 v cc v ee
1997 aug 12 13 philips semiconductors preliminary speci?cation frequency shift keying (fsk) receiver UAA3202m 18 mxin 0.78 19 v em 0 20 fa 2.27 pin symbol dc voltage (v) equivalent circuit mha809 15 w 18 19 mha810 1.2 k w 20 v cc v ee
1997 aug 12 14 philips semiconductors preliminary speci?cation frequency shift keying (fsk) receiver UAA3202m test information tuning procedure for ac tests 1. turn on the signal generator (f i = 433.92 mhz; no modulation; rf input level = - 60 dbm). 2. tune c6 (rf stage input) to obtain a peak voltage on test point a (see fig.11). 3. turn on modulation (f i = 433.92 mhz; f mod = 250 hz square wave; d f = 25 khz; rf input level = - 60 dbm). 4. check that data is appearing on the data output (pin 11) and proceed with the ac tests. ac test conditions table 2 test signals the reference signal level p ref for the following tests is de?ned as the minimum input level in dbm to give a ber 3 10 - 2 (e.g. 15 bit errors per second for 500 bits/s). table 3 test results p 1 is the maximum available power from signal generator 1 at the input of the test board; p 2 is the maximum available power from signal generator 2 at the input of the test board. notes 1. the power-down voltage v pwd alternates between operating mode on (100 ms) and off (100 ms); see fig.5. 2. probe of spectrum analyzer connected to test point a. 3. spectrum analyzer connected to the input of the test board. test signal frequency (mhz) data signal modulation frequency deviation 1 433.92 250 hz square wave fm (fsk) 25 khz 2 433.92 - no modulation - 3 433.82 - no modulation - test generator result 12 sensitivity into pin mxin (see fig.6) modulated test signal 1; p 1 - 94 dbm - ber 3 10 - 2 (e.g. 15 bit errors per second for 500 bits/s) maximum input power (see fig.6) modulated test signal 1; p 1 3- 30 dbm (minimum p max ) - ber 3 10 - 2 (e.g. 15 bit errors per second for 500 bits/s) receiver turn-on time; note 1 test signal 1; p 1 =p ref +10db - check that the ?rst 10 bits are correct; error counting is started 10 ms after pwd switched to operating mode: on intercept point (mixer + pma) see note 2 and fig.7 test signal 3; p 1 = - 55 dbm test signal 2; p 2 =p 1 ip3 = p 1 + 1 2 im3 (db); ip3 3- 38 dbm spurious radiation see note 3 and fig.8 -- no spurious radiation (25 mhz - 1 ghz) with level higher than - 60 dbm (maximum p spur ) 1 db compression point (mixer + pma) see note 2 and fig.9 test signal 3; p 11 = - 70 dbm; p 12 = - 45 dbm (minimum p 1db ) - (p o1 + 70 db) - [p o2 + 45 db (minimum p 1db )] 1 db, where p o1 , p o2 is the output power for test signals with p 11 or p 12 , respectively
1997 aug 12 15 philips semiconductors preliminary speci?cation frequency shift keying (fsk) receiver UAA3202m fig.5 timing diagram for pulsed power-down voltage. handbook, full pagewidth t (ms) 500 300 400 200 100 0 0 3.5 v pwd (v) mha834 fig.6 test configuration a (single generator). (1) for test circuit see fig.11. (2) for ber test facility see fig.10. test circuit (1) (2) generator 1 50 w med900 ber test facility fig.7 test configuration b (ip3). (1) for test circuit see fig.11. spectrum analyzer with probe test circuit (1) generator 1 50 w 2-signal power combiner 50 w generator 2 50 w med901 d f d f = 100 khz d f d f im3
1997 aug 12 16 philips semiconductors preliminary speci?cation frequency shift keying (fsk) receiver UAA3202m fig.8 test configuration c (spurious radiation). (1) for test circuit see fig.11. spectrum analyzer input impedance 50 w test circuit (1) med902 fig.9 test configuration d (1 db compression point). (1) for test circuit see fig.11. spectrum analyzer with probe test circuit (1) generator 1 50 w med903 fig.10 ber test facility. device under test signal generator master clock bit pattern generator preset delay data comparator integrate and dump rx data ber test board to error counter tx data med904 delayed tx data
1997 aug 12 17 philips semiconductors preliminary speci?cation frequency shift keying (fsk) receiver UAA3202m application information a ndbook, full pagewidth mha814 1.5 k w 50 k w 30 k w 150 k w 150 k w 1.4 k w 1.5 k w mixer bias oscillator limiter amplifier 20 19 18 17 16 15 14 13 12 11 12 3 4 5 6 7 8 910 pma v cc rssi v ref v ref phase shift phase detector c7 l5 l4 c1 c16 c18 c3 c24 c14 c13 c2 sawr 432.92 mhz r3 r2 (1) comp UAA3202m v cc v cc data output power-down c17 c12 c25 c22 test point a c23 r4 v cc c19 l2 l3 c20 c5 c4 c8 c9 c11 c10 l1 c6 buffer fig.11 application diagram. (1) stray inductance.
1997 aug 12 18 philips semiconductors preliminary speci?cation frequency shift keying (fsk) receiver UAA3202m table 4 application component list for fig.11 table 5 surface acoustic wave resonator (sawr) data component value tolerance description r2 560 w 2% tc = 50 ppm/k r3 220 w 2% tc = 50 ppm/k r4 820 k w 2% tc = 50 ppm/k c1 4.7 m f 20% - c2 150 pf 10% tc = 0 30 ppm/k; tan d 10 10 - 4 ; f = 1 mhz c3 100 nf 10% tc = 0 30 ppm/k; tan d 10 10 - 4 ; f = 1 mhz c4 100 pf 10% tc = 0 30 ppm/k; tan d 10 10 - 4 ; f = 1 mhz c5 2.7 pf 10% tc = 0 150 ppm/k; tan d 30 10 - 4 ; f = 1 mhz c6 3to10pf - tc = 0 300 ppm/k; tan d 20 10 - 4 ; f = 1 mhz c7 56 pf 10% tc = 0 30 ppm/k; tan d 10 10 - 4 ; f = 1 mhz c8 33 pf 10% tc = 0 30 ppm/k; tan d 10 10 - 4 ; f = 1 mhz c9 100 pf 10% tc = 0 30 ppm/k; tan d 10 10 - 4 ; f = 1 mhz c10 5.6 pf 10% tc = 0 30 ppm/k; tan d 20 10 - 4 ; f = 1 mhz c11 100 pf 10% tc = 0 30 ppm/k; tan d 10 10 - 4 ; f = 1 mhz c12 100 nf 10% tan d 25 10 - 3 ; f = 1 khz c13 2.2 nf 10% tan d 25 10 - 3 ; f = 1 khz c14 33 nf 10% tan d 25 10 - 3 ; f = 1 khz c16 3.9 pf 10% tc = 0 150 ppm/k; tan d 30 10 - 4 ; f = 1 mhz c17 10 nf 10% tan d 25 10 - 3 ; f = 1 khz c18 1.8 pf 10% tc = 0 150 ppm/k; tan d 30 10 - 4 ; f = 1 mhz c19 39 pf 10% tc = 0 30 ppm/k; tan d 10 10 - 4 ; f = 1 mhz c20 3.3 pf 10% tc = 0 150 ppm/k; tan d 30 10 - 4 ; f = 1 mhz c22 18 pf 5% tc = 0 30 ppm/k; tan d 10 10 - 4 ; f = 1 mhz c23 47 nf 10% tan d 25 10 - 3 ; f = 1 khz c24 22 pf 5% tc = 0 30 ppm/k; tan d 10 10 - 4 ; f = 1 mhz c25 1 nf 10% tan d 25 10 - 3 ; f = 1 khz l1 10 nh 10% q min = 50 to 450 mhz; tc = 25 to 125 ppm/k l2 150 m h 10% q min = 45 to 800 khz; c stray 1pf l3 220 m h 10% q min = 45 to 800 khz; c stray 1pf l4 33 nh 10% q min = 45 to 450 mhz; tc = 25 to 125 ppm/k l5 470 m h 10% q min = 45 to 800 khz; c stray 1pf description specification type one-port centre frequency 432.92 mhz 75 khz maximum insertion loss 1.5 db typical loaded q 1600 (50 w load) temperature drift 0.032 ppm/k 2 turnover temperature 43 c
1997 aug 12 19 philips semiconductors preliminary speci?cation frequency shift keying (fsk) receiver UAA3202m layout of printed-circuit board for ac application fig.12 printed-circuit board layout. handbook, full pagewidth mha813 v cc sawr c1 c3 r3 c16 l4 r2 l5 c2 c18 c24 c21 c14 c7 l2 UAA3202m c13 comp power down data c20 c9 c10 l3 c11 c8 c19 c6 c4 c12 c25 r4 c23 c22 c17 l1 c5 b. component side. a. copper side.
1997 aug 12 20 philips semiconductors preliminary speci?cation frequency shift keying (fsk) receiver UAA3202m package outline unit a 1 a 2 a 3 b p cd (1) e (1) eh e ll p q (1) z y w v q references outline version european projection issue date iec jedec eiaj mm 0.21 0.05 1.80 1.65 0.38 0.25 0.20 0.09 7.4 7.0 5.4 5.2 0.65 7.9 7.6 0.9 0.7 0.9 0.5 8 0 o o 0.13 1.25 0.2 0.1 dimensions (mm are the original dimensions) note 1. plastic or metal protrusions of 0.20 mm maximum per side are not included. 1.03 0.63 sot339-1 mo-150ae 93-09-08 95-02-04 x w m q a a 1 a 2 b p d h e l p q detail x e z e c l v m a (a ) 3 a 110 20 11 y 0.25 pin 1 index 0 2.5 5 mm scale ssop20: plastic shrink small outline package; 20 leads; body width 5.3 mm sot339-1 a max. 2.0
1997 aug 12 21 philips semiconductors preliminary speci?cation frequency shift keying (fsk) receiver UAA3202m soldering introduction there is no soldering method that is ideal for all ic packages. wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. however, wave soldering is not always suitable for surface mounted ics, or for printed-circuits with high population densities. in these situations reflow soldering is often used. this text gives a very brief insight to a complex technology. a more in-depth account of soldering ics can be found in our ic package databook (order code 9398 652 90011). re?ow soldering reflow soldering techniques are suitable for all ssop packages. reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. several techniques exist for reflowing; for example, thermal conduction by heated belt. dwell times vary between 50 and 300 seconds depending on heating method. typical reflow temperatures range from 215 to 250 c. preheating is necessary to dry the paste and evaporate the binding agent. preheating duration: 45 minutes at 45 c. wave soldering wave soldering is not recommended for ssop packages. this is because of the likelihood of solder bridging due to closely-spaced leads and the possibility of incomplete solder penetration in multi-lead devices. if wave soldering cannot be avoided, the following conditions must be observed: a double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. the longitudinal axis of the package footprint must be parallel to the solder flow and must incorporate solder thieves at the downstream end. even with these conditions, only consider wave soldering ssop packages that have a body width of 4.4 mm, that is ssop16 (sot369-1) or ssop20 (sot266-1) . during placement and before soldering, the package must be fixed with a droplet of adhesive. the adhesive can be applied by screen printing, pin transfer or syringe dispensing. the package can be soldered after the adhesive is cured. maximum permissible solder temperature is 260 c, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 c within 6 seconds. typical dwell time is 4 seconds at 250 c. a mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. repairing soldered joints fix the component by first soldering two diagonally- opposite end leads. use only a low voltage soldering iron (less than 24 v) applied to the flat part of the lead. contact time must be limited to 10 seconds at up to 300 c. when using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 c.
1997 aug 12 22 philips semiconductors preliminary speci?cation frequency shift keying (fsk) receiver UAA3202m definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.
1997 aug 12 23 philips semiconductors preliminary speci?cation frequency shift keying (fsk) receiver UAA3202m notes
internet: http://www.semiconductors.philips.com philips semiconductors C a worldwide company ? philips electronics n.v. 1997 sca55 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reli able and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not con vey nor imply any license under patent- or other industrial or intellectual property rights. netherlands: postbus 90050, 5600 pb eindhoven, bldg. vb, tel. +31 40 27 82785, fax. +31 40 27 88399 new zealand: 2 wagener place, c.p.o. box 1041, auckland, tel. +64 9 849 4160, fax. +64 9 849 7811 norway: box 1, manglerud 0612, oslo, tel. +47 22 74 8000, fax. +47 22 74 8341 philippines: philips semiconductors philippines inc., 106 valero st. salcedo village, p.o. box 2108 mcc, makati, metro manila, tel. +63 2 816 6380, fax. +63 2 817 3474 poland: ul. lukiska 10, pl 04-123 warszawa, tel. +48 22 612 2831, fax. +48 22 612 2327 portugal: see spain romania: see italy russia: philips russia, ul. usatcheva 35a, 119048 moscow, tel. +7 095 755 6918, fax. +7 095 755 6919 singapore: lorong 1, toa payoh, singapore 1231, tel. +65 350 2538, fax. +65 251 6500 slovakia: see austria slovenia: see italy south africa: s.a. philips pty ltd., 195-215 main road martindale, 2092 johannesburg, p.o. box 7430 johannesburg 2000, tel. +27 11 470 5911, fax. +27 11 470 5494 south america: rua do rocio 220, 5th floor, suite 51, 04552-903 s?o paulo, s?o paulo - sp, brazil, tel. +55 11 821 2333, fax. +55 11 829 1849 spain: balmes 22, 08007 barcelona, tel. +34 3 301 6312, fax. +34 3 301 4107 sweden: kottbygatan 7, akalla, s-16485 stockholm, tel. +46 8 632 2000, fax. +46 8 632 2745 switzerland: allmendstrasse 140, ch-8027 zrich, tel. +41 1 488 2686, fax. +41 1 481 7730 taiwan: philips semiconductors, 6f, no. 96, chien kuo n. rd., sec. 1, taipei, taiwan tel. +886 2 2134 2865, fax. +886 2 2134 2874 thailand: philips electronics (thailand) ltd., 209/2 sanpavuth-bangna road prakanong, bangkok 10260, tel. +66 2 745 4090, fax. +66 2 398 0793 turkey: talatpasa cad. no. 5, 80640 gltepe/istanbul, tel. +90 212 279 2770, fax. +90 212 282 6707 ukraine : philips ukraine, 4 patrice lumumba str., building b, floor 7, 252042 kiev, tel. +380 44 264 2776, fax. +380 44 268 0461 united kingdom: philips semiconductors ltd., 276 bath road, hayes, middlesex ub3 5bx, tel. +44 181 730 5000, fax. +44 181 754 8421 united states: 811 east arques avenue, sunnyvale, ca 94088-3409, tel. +1 800 234 7381 uruguay: see south america vietnam: see singapore yugoslavia: philips, trg n. pasica 5/v, 11000 beograd, tel. +381 11 625 344, fax.+381 11 635 777 for all other countries apply to: philips semiconductors, marketing & sales communications, building be-p, p.o. box 218, 5600 md eindhoven, the netherlands, fax. +31 40 27 24825 argentina: see south america australia: 34 waterloo road, north ryde, nsw 2113, tel. +61 2 9805 4455, fax. +61 2 9805 4466 austria: computerstr. 6, a-1101 wien, p.o. box 213, tel. +43 160 1010, fax. +43 160 101 1210 belarus: hotel minsk business center, bld. 3, r. 1211, volodarski str. 6, 220050 minsk, tel. +375 172 200 733, fax. +375 172 200 773 belgium: see the netherlands brazil: see south america bulgaria: philips bulgaria ltd., energoproject, 15th floor, 51 james bourchier blvd., 1407 sofia, tel. +359 2 689 211, fax. +359 2 689 102 canada: philips semiconductors/components, tel. +1 800 234 7381 china/hong kong: 501 hong kong industrial technology centre, 72 tat chee avenue, kowloon tong, hong kong, tel. +852 2319 7888, fax. +852 2319 7700 colombia: see south america czech republic: see austria denmark: prags boulevard 80, pb 1919, dk-2300 copenhagen s, tel. +45 32 88 2636, fax. +45 31 57 0044 finland: sinikalliontie 3, fin-02630 espoo, tel. +358 9 615800, fax. +358 9 61580920 france: 4 rue du port-aux-vins, bp317, 92156 suresnes cedex, tel. +33 1 40 99 6161, fax. +33 1 40 99 6427 germany: hammerbrookstra?e 69, d-20097 hamburg, tel. +49 40 23 53 60, fax. +49 40 23 536 300 greece: no. 15, 25th march street, gr 17778 tavros/athens, tel. +30 1 4894 339/239, fax. +30 1 4814 240 hungary: see austria india: philips india ltd, band box building, 2nd floor, 254-d, dr. annie besant road, worli, mumbai 400 025, tel. +91 22 493 8541, fax. +91 22 493 0966 indonesia: see singapore ireland: newstead, clonskeagh, dublin 14, tel. +353 1 7640 000, fax. +353 1 7640 200 israel: rapac electronics, 7 kehilat saloniki st, po box 18053, tel aviv 61180, tel. +972 3 645 0444, fax. +972 3 649 1007 italy: philips semiconductors, piazza iv novembre 3, 20124 milano, tel. +39 2 6752 2531, fax. +39 2 6752 2557 japan: philips bldg 13-37, kohnan 2-chome, minato-ku, tokyo 108, tel. +81 3 3740 5130, fax. +81 3 3740 5077 korea: philips house, 260-199 itaewon-dong, yongsan-ku, seoul, tel. +82 2 709 1412, fax. +82 2 709 1415 malaysia: no. 76 jalan universiti, 46200 petaling jaya, selangor, tel. +60 3 750 5214, fax. +60 3 757 4880 mexico: 5900 gateway east, suite 200, el paso, texas 79905, tel. +9-5 800 234 7381 middle east: see italy printed in the netherlands 547027/1200/01/pp24 date of release: 1997 aug 12 document order number: 9397 750 02306

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